生命周期: | Obsolete | 零件包装代码: | TO-262AA |
包装说明: | IN-LINE, R-PSIP-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.32 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 40 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (Abs) (ID): | 20 A |
最大漏极电流 (ID): | 20 A | 最大漏源导通电阻: | 0.185 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-262AA |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 70 W |
最大脉冲漏极电流 (IDM): | 80 A | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SJ492-S-AZ | NEC | Power Field-Effect Transistor, 20A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Met |
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2SJ492-Z-E1-AZ | RENESAS | Switching P-Channel Power MOSFET, MP-25Z, /Embossed Tape |
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2SJ492-Z-E2-AZ | RENESAS | 2SJ492-Z-E2-AZ |
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2SJ492-ZJ | NEC | SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
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2SJ492-ZJ | RENESAS | 20A, 60V, 0.185ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, 3 PIN |
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2SJ492-ZJ-AZ | NEC | Power Field-Effect Transistor, 20A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Met |
获取价格 |