Preliminary Datasheet
R07DS0433EJ0400
(Previous: REJ03G0870-0300)
Rev.4.00
2SJ496
Silicon P Channel MOS FET
Jun 07, 2011
Description
High speed power switching
Features
•
Low on-resistance
DS (on) = 0.12 Ω typ. (at VGS = –10 V, ID = –2.5 A)
R
•
•
4 V gate drive devices.
Large current capacitance
ID = –5 A
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
D
1. Source
2. Drain
3. Gate
G
3
2
1
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Value
–60
±20
–5
Unit
V
V
A
Note 1
Drain peak current
ID (pulse)
IDR
–20
–5
A
Body to drain diode reverse drain current
Avalanche current
A
Note 3
IAP
–5
A
Note 3
Avalanche energy
EAR
2.14
0.9
mJ
W
°C
°C
Channel dissipation
Pch Note 2
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 100 μs, duty cycle ≤ 10%
2. Value at Ta = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
R07DS0433EJ0400 Rev.4.00
Jun 07, 2011
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