Datasheet > 2SJ496_11

2SJ496_11

更新时间： 2024-11-14 12:53:03

品牌	Logo	应用领域
瑞萨 - RENESAS		晶体晶体管场效应晶体管
页数	文件大小	规格书
8页	114K
描述
Silicon P Channel MOS FET

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中文翻译

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数据手册

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2SJ496_11 数据手册

Preliminary Datasheet

R07DS0433EJ0400

(Previous: REJ03G0870-0300)

Rev.4.00

2SJ496

Silicon P Channel MOS FET

Jun 07, 2011

Description

High speed power switching

Features

•

Low on-resistance

_{DS (on)}= 0.12 Ω typ. (at V_GS= –10 V, I_D= –2.5 A)

•

4 V gate drive devices.

Large current capacitance

I_D= –5 A

Outline

RENESAS Package code: PRSS0003DC-A

(Package name: TO-92 Mod)

1. Source

2. Drain

3. Gate

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Value

–60

±20

–5

Unit

Note 1

Drain peak current

I_{D (pulse)}

I_DR

–20

–5

Body to drain diode reverse drain current

Avalanche current

Note 3

I_AP

–5

Note 3

Avalanche energy

E_AR

2.14

0.9

°C

Channel dissipation

Pch ^{Note 2}

Channel temperature

Tch

150

Storage temperature

Tstg

–55 to +150

Notes: 1. PW ≤ 100 μs, duty cycle ≤ 10%

2. Value at Ta = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

R07DS0433EJ0400 Rev.4.00

Jun 07, 2011

Page 1 of 7

12 3 4 5 6 7 8

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