Datasheet > 2SJ505(L)|2SJ505(S)

2SJ505(L)|2SJ505(S)

更新时间： 2022-01-19 12:39:00

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2SJ505(L)|2SJ505(S) 数据手册

2SJ505(L), 2SJ505(S)

Silicon P Channel MOS FET

High Speed Power Switching

ADE-208-547B (Z)

3rd. Edition

Jun. 1998

Features

•

Low on-resistance

R_DS(on)= 0.017Ω typ.

Low drive current.

•

4V gate drive devices.

High speed switching.

Outline

LDPAK

1. Gate

2. Drain

3. Source

4. Drain

12 3 4 5 6 7...12

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型号	品牌	描述	获取价格	数据表
2SJ505(S)	HITACHI	Power Field-Effect Transistor, 0.036ohm, P-Channel, Metal-oxide Semiconductor FET, LDPAK-3	获取价格
2SJ505(S)	RENESAS	0.036ohm, POWER, FET, LDPAK-3	获取价格
2SJ505(S)TL	HITACHI	Power Field-Effect Transistor, 50A I(D), 60V, 0.045ohm, 1-Element, P-Channel, Silicon, Met	获取价格
2SJ505(S)TL	RENESAS	50A, 60V, 0.045ohm, P-CHANNEL, Si, POWER, MOSFET	获取价格
2SJ505(S)TR	HITACHI	Power Field-Effect Transistor, 50A I(D), 60V, 0.045ohm, 1-Element, P-Channel, Silicon, Met	获取价格
2SJ505(S)TR	RENESAS	暂无描述	获取价格