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2SJ506S PDF预览

2SJ506S

更新时间: 2024-10-31 22:35:55
品牌 Logo 应用领域
日立 - HITACHI 晶体开关晶体管脉冲电源开关
页数 文件大小 规格书
10页 53K
描述
Silicon P Channel MOS FET High Speed Power Switching

2SJ506S 数据手册

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2SJ506(L), 2SJ506(S)  
Silicon P Channel MOS FET  
High Speed Power Switching  
ADE-208-548  
Target Specification 1st. Edition  
Features  
Low on-resistance  
RDS(on) = 0.065 typ. (at VGS = –10V, ID = –5A)  
Low drive current  
High speed switching  
4V gate drive devices.  
Outline  
DPAK–2  
4
4
D
1
2
3
G
1. Gate  
2. Drain  
3. Source  
4. Drain  
1
2
3
S

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