Datasheet > 2SJ512(F)

2SJ512(F)

更新时间： 2024-01-27 11:30:11

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	444K
描述
2SJ512(F)

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技术参数
数据手册

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2SJ512(F) 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

2SJ512(F) 数据手册

2SJ512

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L²−π−MOSV)

2SJ512

Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Unit: mm

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 1.0 Ω (typ.)

DS (ON)

: |Y | = 3.7 S (typ.)

z Low leakage current : I

= −100 μA (max) (V

= −250 V)

DSS

z Enhancement mode : V = −1.5 to −3.5 V (V

= −10 V, I = −1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

−250

±20

−5

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Pulse (Note 1)

Drain current

−20

Drain power dissipation (Tc = 25°C)

JEDEC

JEITA

―

Single pulse avalanche energy

155

SC-67

(Note 2)

TOSHIBA

2-10R1B

Avalanche current

−5

3.0

Repetitive avalenche energy (Note 3)

Channel temperature

°C

Weight: 1.9 g (typ.)

150

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

4.16

62.5

Unit

Thermal resistance, channel to case

°C / W

th (ch−c)

th (ch−a)

Thermal resistance, channel to

ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = −50 V, T = 25°C (initial), L = 10.5 mH, R = 25 Ω, I = −5 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2009-09-29

12 3 4 5 6

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