Datasheet > 2SJ508_07

2SJ508_07

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器稳压器电机驱动 DC-DC转换器
页数	文件大小	规格书
6页	224K
描述
Chopper Regulator, DC−DC Converter and Motor Drive Applications

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2SJ508_07 数据手册

2SJ508

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L −π−MOSV)

2SJ508

Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Unit: mm

z 4-V gate drive

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 1.34 Ω (typ.)

DS (ON)

: |Y | = 0.7 S (typ.)

z Low leakage current : I

= −100 μA(max) (V

= −100 V)

DSS

z Enhancement mode : V = −0.8~−2.0 V (V

= −10 V, I = −1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

−100

±20

−1

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Pulse (Note 1)

Drain current

−3

Drain power dissipation

0.5

(Note 2)

1.5

Single pulse avalanche energy

(Note 3)

JEDEC

JEITA

―

136.5

Avalanche current

−1

0.05

Repetitive avalanche energy (Note 4)

Channel temperature

°C

TOSHIBA

2−5K1B

150

Weight: 0.05 g (typ.)

Storage temperature range

stg

−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

250

Unit

Thermal resistance, channel to ambient

°C / W

th (ch−a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)

Note 3: V

= −50 V, T = 25°C (initial), L = 168 mH, R = 25 Ω, I

= −1 A

Note 4: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

Marking

Part No. (or abbreviation code)

Z E

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Lot No.

2007-01-16

12 3 4 5 6

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