Datasheet > 2SJ506(L)|2SJ506(S)

2SJ506(L)|2SJ506(S)

更新时间： 2022-01-19 12:39:00

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2SJ506(L)|2SJ506(S) 数据手册

2SJ506(L), 2SJ506(S)

Silicon P Channel MOS FET

High Speed Power Switching

ADE-208-548C (Z)

4th. Edition

Jun. 1998

Features

•

Low on-resistance

R_DS(on)= 0.065 Ω typ. (at V_GS= –10V, I_D= –5A)

•

Low drive current

High speed switching

4V gate drive devices.

Outline

DPAK–2

1. Gate

2. Drain

3. Source

4. Drain

12 3 4 5 6 7...12

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型号	品牌	描述	获取价格	数据表
2SJ506(S)	HITACHI	Power Field-Effect Transistor, 0.18ohm, SC-64, 3 PIN	获取价格
2SJ506(S)TL	HITACHI	Power Field-Effect Transistor, 10A I(D), 30V, 0.18ohm, 1-Element, P-Channel, Silicon, Meta	获取价格
2SJ506(S)TR	HITACHI	暂无描述	获取价格
2SJ506(S)TR	RENESAS	暂无描述	获取价格
2SJ506L	HITACHI	Silicon P Channel MOS FET High Speed Power Switching	获取价格
2SJ506L	RENESAS	Silicon P Channel MOS FET	获取价格