Datasheet > 2SJ505(L)|2SJ505(S)

2SJ505(L)|2SJ505(S)

更新时间： 2022-01-19 12:39:00

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其他 - ETC		/
页数	文件大小	规格书
12页	64K
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2SJ505(L)|2SJ505(S) 数据手册

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2SJ505(L), 2SJ505(S)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

Static Drain to Source on State Resistance

vs. Drain Current

100

–2

–1.6

–1.2

–0.8

–0.4

Pulse Test

= –4 V

–10 V

I = –50 A

–20 A

–10 A

Pulse Test

–5 A

–1000

–30 –100 –300

–10

–4

–8

–12

–16

–20

–1

–3

Drain Current

(A)

Gate to Source Voltage

(V)

Static Drain to Source on State Resistance

vs. Temperature

Forward Transfer Admittance vs.

Drain Current

100

Pulse Test

= –50 A

Tc = –25 °C

25 °C

–20 A

–50 A

= –4 V

–10 A

75 °C

–10,–20A

= –10 V

0.3

0.1

= –10 V

Pulse Test

–40

–0.1

–1

–3

–10 –30 –100

–0.3

120

160

Case Temperature Tc (°C)

Drain Current I

(A)

1 2 3 456 7 8...12

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与2SJ505(L)|2SJ505(S)相关器件

型号	品牌	描述	获取价格	数据表
2SJ505(S)	HITACHI	Power Field-Effect Transistor, 0.036ohm, P-Channel, Metal-oxide Semiconductor FET, LDPAK-3	获取价格
2SJ505(S)	RENESAS	0.036ohm, POWER, FET, LDPAK-3	获取价格
2SJ505(S)TL	HITACHI	Power Field-Effect Transistor, 50A I(D), 60V, 0.045ohm, 1-Element, P-Channel, Silicon, Met	获取价格
2SJ505(S)TL	RENESAS	50A, 60V, 0.045ohm, P-CHANNEL, Si, POWER, MOSFET	获取价格
2SJ505(S)TR	HITACHI	Power Field-Effect Transistor, 50A I(D), 60V, 0.045ohm, 1-Element, P-Channel, Silicon, Met	获取价格
2SJ505(S)TR	RENESAS	暂无描述	获取价格