生命周期: | Transferred | 零件包装代码: | TO-252 |
包装说明: | IN-LINE, R-PSIP-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.14 |
最大漏源导通电阻: | 0.036 Ω | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e0 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SJ505(L)|2SJ505(S) | ETC |
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2SJ505(S) | HITACHI | Power Field-Effect Transistor, 0.036ohm, P-Channel, Metal-oxide Semiconductor FET, LDPAK-3 |
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2SJ505(S) | RENESAS | 0.036ohm, POWER, FET, LDPAK-3 |
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2SJ505(S)TL | HITACHI | Power Field-Effect Transistor, 50A I(D), 60V, 0.045ohm, 1-Element, P-Channel, Silicon, Met |
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2SJ505(S)TL | RENESAS | 50A, 60V, 0.045ohm, P-CHANNEL, Si, POWER, MOSFET |
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2SJ505(S)TR | HITACHI | Power Field-Effect Transistor, 50A I(D), 60V, 0.045ohm, 1-Element, P-Channel, Silicon, Met |
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