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2SJ496 PDF预览

2SJ496

更新时间: 2024-11-13 22:33:19
品牌 Logo 应用领域
日立 - HITACHI 晶体开关小信号场效应晶体管电源开关
页数 文件大小 规格书
10页 53K
描述
Silicon P-Channel MOS FET High Speed Power Switching

2SJ496 数据手册

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2SJ496  
Silicon P-Channel MOS FET  
High Speed Power Switching  
ADE-208-482  
1st. Edition  
Features  
Low on-resistance  
RDS(on) = 0.12typ. (at VGS = –10 V, ID = –2.5 A)  
4V gate drive devices.  
Large current capacitance  
ID = –5 A  
Outline  
TO-92 Mod  
3
2
1
D
1. Source  
2. Drain  
3. Gate  
G
S

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Ultrahigh-speed switching