2SJ495-AZ

更新时间： 2024-11-14 13:04:27

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2SJ495-AZ 数据手册

DATA SHEET

MOS FIELD EFFECT POWER TRANSISTORS

2SJ495

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION

PACKAGE DIMENSIONS

(in millimeter)

This product is P-Channel MOS Field Effect Transistor

designed for high current switching applications.

10.0 ± 0.3

4.5 ± 0.2

3.2 ± 0.2

2.7 ± 0.2

FEATURES

•

Super Low On-State Resistance

R^DS(on)1= 30 mΩ MAX. (VGS = –10 V, ID = –15 A)

R^DS(on)2= 56 mΩ MAX. (VGS = –4 V, ID = –15 A)

Low Ciss Ciss = 4120 pF TYP.

•

Built-in Gate Protection Diode

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage

VDSS

V^GSS(AC)

VGSS(DC)

I^D(DC)

I^D(pulse)

–60

m20

Gate to Source Voltage*

2.5 ± 0.1

0.65 ± 0.1

0.7 ± 0.1

2.54

1.3 ± 0.2

1.5 ± 0.2

2.54

Gate to Source Voltage

–20, 0

m30

Drain Current (DC)

Drain Current (pulse)**

m120

1. Gate

2. Drain

3. Source

Total Power Dissipation (TC = 25°C)

Total Power Dissipation (T^A= 25°C)

Channel Temperature

°C

2.0

2 3

T^ch

150

Storage Temperature

Tstg

–55 to +150 °C

*f = 20 kHz, Duty Cycle ≤ 10% (+Side)

**PW ≤ 10 µs, Duty Cycle ≤ 1%

THERMAL RESISTANCE

Channel to Case

MP-45F (ISOLATED TO-220)

Rth(ch-c)

Rth(ch-A)

3.57

62.5

°C/W

Drain

Channel to Ambient

Body

Diode

Gate

Gate Protection

Diode

Source

The diode connected between the gate and source of the transistor serves as a protector against ESD. When this deveice

acutally used, an addtional protection circiut is externally required if a voltage exceeding the rated voltage may be applied

to this device.

Document No. D11267EJ2V0DS00 (2nd edition)

Date Published November 1997 N

Printed in Japan

1997

12 3 4 5 6 7 8

中文翻译

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