2SJ495-AZ

更新时间： 2024-02-09 01:08:24

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
8页	77K
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数据手册

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2SJ495-AZ 数据手册

2SJ495

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1 000

100

th(ch-a) = 62.5°C/W

Rth(ch-c) = 3.57°C/W

0.1

0.01

Single Pulse

0.001

100

1 m

10 m

100 m

100

1 000

PW - Pulse Width - s

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

1000

100

150

100

Pulsed

DS = –10 V

Pulsed

ch=–25°C

25°C

75°C

125°C

ID = –15 A

–1

–10

–100

–1000

–10

–20

–30

D- Drain Current - A

V^GS- Gate to Source Voltage - V

DRAIN TO SOURCE ON-STATE

RESISTANCE vs. DRAIN CURRENT

GATE TO SOURCE CUTOFF VOLTAGE vs.

CHANNEL TEMPERATURE

Pulsed

DS = –10 V

= –1 mA

–2.0

–1.5

–1.0

GS = –4 V

GS = –10 V

–0.5

–1

–10

- Drain Current - A

–100

–50

100

150

T^ch- Channel Temperature - °C

1 2 345 6 7 8

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