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2SJ496 PDF预览

2SJ496

更新时间: 2024-11-14 06:25:59
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体小信号场效应晶体管
页数 文件大小 规格书
8页 87K
描述
Silicon P Channel MOS FET

2SJ496 技术参数

生命周期:Not Recommended零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.32Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):5 A最大漏极电流 (ID):5 A
最大漏源导通电阻:0.24 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):0.9 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SJ496 数据手册

 浏览型号2SJ496的Datasheet PDF文件第2页浏览型号2SJ496的Datasheet PDF文件第3页浏览型号2SJ496的Datasheet PDF文件第4页浏览型号2SJ496的Datasheet PDF文件第5页浏览型号2SJ496的Datasheet PDF文件第6页浏览型号2SJ496的Datasheet PDF文件第7页 
2SJ496  
Silicon P Channel MOS FET  
REJ03G0870-0300  
(Previous: ADE-208-482A)  
Rev.3.00  
Sep 07, 2005  
Description  
High speed power switching  
Features  
Low on-resistance  
RDS (on) = 0.12 typ. (at VGS = –10 V, ID = –2.5 A)  
4 V gate drive devices.  
Large current capacitance  
ID = –5 A  
Outline  
RENESAS Package code: PRSS0003DC-A  
(Package name: TO-92 Mod)  
D
1. Source  
2. Drain  
3. Gate  
G
3
2
1
S
Rev.3.00 Sep 07, 2005 page 1 of 7  

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