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2SJ496 PDF预览

2SJ496

更新时间: 2024-02-13 20:45:55
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体小信号场效应晶体管
页数 文件大小 规格书
8页 87K
描述
Silicon P Channel MOS FET

2SJ496 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:TO-92 Mod
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.25
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):5 A最大漏极电流 (ID):5 A
最大漏源导通电阻:0.24 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:O-PBCY-T3JESD-609代码:e2
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):0.9 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:TIN COPPER端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SJ496 数据手册

 浏览型号2SJ496的Datasheet PDF文件第1页浏览型号2SJ496的Datasheet PDF文件第2页浏览型号2SJ496的Datasheet PDF文件第3页浏览型号2SJ496的Datasheet PDF文件第5页浏览型号2SJ496的Datasheet PDF文件第6页浏览型号2SJ496的Datasheet PDF文件第7页 
2SJ496  
Static Drain to Source on State Resistance  
vs. Temperature  
Forward Transfer Admittance vs.  
Drain Current  
20  
10  
0.5  
Pulse Test  
0.4  
0.3  
0.2  
0.1  
0
Tc = –25°C  
5
–2 A  
ID = –5 A  
25°C  
2
1
–1 A  
VGS = –4 V  
75°C  
–5 A  
–1 A, –2 A  
0.5  
VDS = –10 V  
Pulse Test  
–10 V  
0
0.2  
–0.1 –0.2  
–40  
40  
80  
120  
160  
–0.5 –1 –2  
–5 –10  
Case Temperature Tc (°C)  
Drain Current ID (A)  
Body-Drain Diode Reverse  
Recovery Time  
Typical Capacitance vs.  
Drain to Source Voltage  
500  
2000  
1000  
500  
Ciss  
200  
100  
50  
Coss  
200  
100  
50  
20  
10  
5
Crss  
di / dt = 50 A / µs  
GS = 0, Ta = 25°C  
20  
10  
VGS = 0  
f = 1 MHz  
V
–0.1 –0.2  
–0.5 –1  
–2 –5 –10  
0
–10  
–20  
–30  
–40  
–50  
Reverse Drain Current IDR (A)  
Drain to Source Voltage VDS (V)  
Dynamic Input Characteristics  
Switching Characteristics  
0
–20  
1000  
0
VDD = –10 V  
–25 V  
–50 V  
ID = –5 A  
300  
100  
30  
–4  
t
d(off)  
t
f
–40  
–8  
VGS  
VDS  
t
r
–60  
–12  
–16  
–20  
t
d(on)  
VDD = –50 V  
–25 V  
–10 V  
10  
–80  
3
1
VGS = –10 V, VDD = –30 V  
PW = 5 µs, duty 1 %  
–100  
0
8
16  
24  
32  
40  
–0.1 –0.2  
–0.5 –1  
–2  
–5 –10  
Gate Charge Qg (nc)  
Drain Current ID (A)  
Rev.3.00 Sep 07, 2005 page 4 of 7  

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