2SJ484WYTL

更新时间： 2024-11-14 13:04:23

品牌	Logo	应用领域
日立 - HITACHI		晶体开关小信号场效应晶体管电源开关
页数	文件大小	规格书
9页	46K
描述
Power Field-Effect Transistor, 2A I(D), 30V, 0.45ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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2SJ484WYTL 数据手册

2SJ484

Silicon P-Channel MOS FET

High Speed Power Switching

ADE-208-501 A

2nd. Edition

Features

•

Low on-resistance

R_DS(on)= 0.18 Ω typ. (at V_GS= –10V, I_D= –1A)

•

Low drive current

High speed switching

4V gate drive devices.

Outline

UPAK

1. Gate

2. Drain

3. Source

4. Drain

12 3 4 5 6 7...9

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型号	品牌	获取价格	描述	数据表
2SJ484WYTL-E	RENESAS	获取价格	Silicon P Channel MOS FET
2SJ484WYTR	RENESAS	获取价格	2A, 30V, 0.45ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ484WYTR	HITACHI	获取价格	2A, 30V, 0.45ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ484WYTR-E	RENESAS	获取价格	Silicon P Channel MOS FET
2SJ484WYUL	HITACHI	获取价格	Power Field-Effect Transistor, 2A I(D), 30V, 0.45ohm, 1-Element, P-Channel, Silicon, Metal
2SJ484WYUR	RENESAS	获取价格	暂无描述
2SJ485	SANYO	获取价格	Ultrahigh-Speed Switching Applications
2SJ485TP	SANYO	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| 4A I(D) \| TO-251VAR
2SJ485TP-FA	SANYO	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| 4A I(D) \| TO-252VAR
2SJ486	HITACHI	获取价格	Silicon P Channel MOS FET Low FrequencyPower Switching