2SJ484WYTR

更新时间： 2024-11-14 13:04:23

品牌	Logo	应用领域
瑞萨 - RENESAS		晶体晶体管场效应晶体管
页数	文件大小	规格书
7页	79K
描述
2A, 30V, 0.45ohm, P-CHANNEL, Si, POWER, MOSFET

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2SJ484WYTR 技术参数

2SJ484

Silicon P Channel MOS FET

REJ03G0868-0300

(Previous: ADE-208-501A)

Rev.3.00

Sep 07, 2005

Description

High speed power switching

Features

•

Low on-resistance

R_{DS (on)}= 0.18 Ω typ. (at V_GS= –10 V, I_D= –1 A)

Low drive current

High speed switching

•

4 V gate drive devices.

Outline

RENESAS Package code: PLZZ0004CA-A

(Package name: UPAK

)

1. Gate

2. Drain

3. Source

4. Drain

Note: Marking is “WY”.

*UPAK is a trademark of Renesas Technology Corp.

Rev.3.00 Sep 07, 2005 page 1 of 6

12 3 4 5 6 7

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型号	品牌	获取价格	描述	数据表
2SJ484WYTR-E	RENESAS	获取价格	Silicon P Channel MOS FET
2SJ484WYUL	HITACHI	获取价格	Power Field-Effect Transistor, 2A I(D), 30V, 0.45ohm, 1-Element, P-Channel, Silicon, Metal
2SJ484WYUR	RENESAS	获取价格	暂无描述
2SJ485	SANYO	获取价格	Ultrahigh-Speed Switching Applications
2SJ485TP	SANYO	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| 4A I(D) \| TO-251VAR
2SJ485TP-FA	SANYO	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| 4A I(D) \| TO-252VAR
2SJ486	HITACHI	获取价格	Silicon P Channel MOS FET Low FrequencyPower Switching
2SJ486	RENESAS	获取价格	Silicon P Channel MOS FET
2SJ486	TYSEMI	获取价格	Low on-resistance
2SJ486ZU	HITACHI	获取价格	Power Field-Effect Transistor, 0.3A I(D), 30V, 1.2ohm, 1-Element, P-Channel, Silicon, Meta