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2SJ483 PDF预览

2SJ483

更新时间: 2024-11-14 06:18:39
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体小信号场效应晶体管
页数 文件大小 规格书
7页 1297K
描述
Silicon P Channel MOS FET

2SJ483 技术参数

生命周期:Transferred零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknown风险等级:5.38
最大漏源导通电阻:0.17 ΩJESD-30 代码:O-PBCY-T3
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
Base Number Matches:1

2SJ483 数据手册

 浏览型号2SJ483的Datasheet PDF文件第2页浏览型号2SJ483的Datasheet PDF文件第3页浏览型号2SJ483的Datasheet PDF文件第4页浏览型号2SJ483的Datasheet PDF文件第5页浏览型号2SJ483的Datasheet PDF文件第6页浏览型号2SJ483的Datasheet PDF文件第7页 
2SJ483  
Silicon P Channel MOS FET  
REJ03G0867-0200  
(Previous: ADE-208-519)  
Rev.2.00  
Sep 07, 2005  
Description  
High speed power switching  
Features  
Low on-resistance  
DS (on) = 0.08 typ (at VGS = –10 V, ID = –2.5 A)  
R
4 V gate drive devices.  
Large current capacitance  
ID = –5 A  
Outline  
RENESAS Package code: PRSS0003DC-A  
(Package name: TO-92 Mod)  
D
1. Source  
2. Drain  
3. Gate  
G
S
Rev.2.00 Sep 07, 2005 page 1 of 6  

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