是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-92 | 包装说明: | CYLINDRICAL, O-PBCY-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.76 | Is Samacsys: | N |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 5 A | 最大漏极电流 (ID): | 5 A |
最大漏源导通电阻: | 0.17 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | O-PBCY-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 0.9 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SJ484 | RENESAS |
获取价格 |
Silicon P Channel MOS FET | |
2SJ484 | HITACHI |
获取价格 |
Silicon P-Channel MOS FET High Speed Power Switching | |
2SJ484WY | HITACHI |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 30V, 0.45ohm, 1-Element, P-Channel, Silicon, Metal | |
2SJ484WYTL | HITACHI |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 30V, 0.45ohm, 1-Element, P-Channel, Silicon, Metal | |
2SJ484WYTL | RENESAS |
获取价格 |
2A, 30V, 0.45ohm, P-CHANNEL, Si, POWER, MOSFET | |
2SJ484WYTL-E | RENESAS |
获取价格 |
Silicon P Channel MOS FET | |
2SJ484WYTR | RENESAS |
获取价格 |
2A, 30V, 0.45ohm, P-CHANNEL, Si, POWER, MOSFET | |
2SJ484WYTR | HITACHI |
获取价格 |
2A, 30V, 0.45ohm, P-CHANNEL, Si, POWER, MOSFET | |
2SJ484WYTR-E | RENESAS |
获取价格 |
Silicon P Channel MOS FET | |
2SJ484WYUL | HITACHI |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 30V, 0.45ohm, 1-Element, P-Channel, Silicon, Metal |