5秒后页面跳转
2SJ483TZ-E PDF预览

2SJ483TZ-E

更新时间: 2024-11-14 06:18:39
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体小信号场效应晶体管开关
页数 文件大小 规格书
7页 1297K
描述
Silicon P Channel MOS FET

2SJ483TZ-E 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.76Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):5 A最大漏极电流 (ID):5 A
最大漏源导通电阻:0.17 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):0.9 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SJ483TZ-E 数据手册

 浏览型号2SJ483TZ-E的Datasheet PDF文件第2页浏览型号2SJ483TZ-E的Datasheet PDF文件第3页浏览型号2SJ483TZ-E的Datasheet PDF文件第4页浏览型号2SJ483TZ-E的Datasheet PDF文件第5页浏览型号2SJ483TZ-E的Datasheet PDF文件第6页浏览型号2SJ483TZ-E的Datasheet PDF文件第7页 
2SJ483  
Silicon P Channel MOS FET  
REJ03G0867-0200  
(Previous: ADE-208-519)  
Rev.2.00  
Sep 07, 2005  
Description  
High speed power switching  
Features  
Low on-resistance  
DS (on) = 0.08 typ (at VGS = –10 V, ID = –2.5 A)  
R
4 V gate drive devices.  
Large current capacitance  
ID = –5 A  
Outline  
RENESAS Package code: PRSS0003DC-A  
(Package name: TO-92 Mod)  
D
1. Source  
2. Drain  
3. Gate  
G
S
Rev.2.00 Sep 07, 2005 page 1 of 6  

与2SJ483TZ-E相关器件

型号 品牌 获取价格 描述 数据表
2SJ484 RENESAS

获取价格

Silicon P Channel MOS FET
2SJ484 HITACHI

获取价格

Silicon P-Channel MOS FET High Speed Power Switching
2SJ484WY HITACHI

获取价格

Power Field-Effect Transistor, 2A I(D), 30V, 0.45ohm, 1-Element, P-Channel, Silicon, Metal
2SJ484WYTL HITACHI

获取价格

Power Field-Effect Transistor, 2A I(D), 30V, 0.45ohm, 1-Element, P-Channel, Silicon, Metal
2SJ484WYTL RENESAS

获取价格

2A, 30V, 0.45ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ484WYTL-E RENESAS

获取价格

Silicon P Channel MOS FET
2SJ484WYTR RENESAS

获取价格

2A, 30V, 0.45ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ484WYTR HITACHI

获取价格

2A, 30V, 0.45ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ484WYTR-E RENESAS

获取价格

Silicon P Channel MOS FET
2SJ484WYUL HITACHI

获取价格

Power Field-Effect Transistor, 2A I(D), 30V, 0.45ohm, 1-Element, P-Channel, Silicon, Metal