生命周期: | Active | Reach Compliance Code: | compliant |
风险等级: | 5.06 | Is Samacsys: | N |
配置: | Single | 最大漏极电流 (Abs) (ID): | 0.3 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 0.25 W | 子类别: | Other Transistors |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SJ483 | HITACHI | Silicon P Channel MOS FET High Speed Power Switching |
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2SJ483 | RENESAS | Silicon P Channel MOS FET |
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2SJ483TZ-E | RENESAS | Silicon P Channel MOS FET |
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2SJ484 | RENESAS | Silicon P Channel MOS FET |
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2SJ484 | HITACHI | Silicon P-Channel MOS FET High Speed Power Switching |
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2SJ484WY | HITACHI | Power Field-Effect Transistor, 2A I(D), 30V, 0.45ohm, 1-Element, P-Channel, Silicon, Metal |
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