生命周期: | Obsolete | 零件包装代码: | TO-220AB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.82 | Is Samacsys: | N |
其他特性: | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | 配置: | SINGLE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 25 A |
最大漏源导通电阻: | 0.11 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | P-CHANNEL | 功耗环境最大值: | 50 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 430 ns |
最大开启时间(吨): | 145 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SJ475-01_06 | FUJI |
获取价格 |
P-CHANNEL SILICON POWER MOSFET | |
2SJ476-01 | ETC |
获取价格 |
||
2SJ476-01L | FUJI |
获取价格 |
Power MOSFET | |
2SJ476-01L_06 | FUJI |
获取价格 |
P-CHANNEL SILICON POWER MOSFET | |
2SJ476-01S | FUJI |
获取价格 |
P-CHANNEL SILICON POWER MOSFET | |
2SJ477-01MR | FUJI |
获取价格 |
Power MOSFET | |
2SJ477-01MR_06 | FUJI |
获取价格 |
P-CHANNEL SILICON POWER MOSFET | |
2SJ478 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-220AB | |
2SJ479 | HITACHI |
获取价格 |
Silicon P Channel DV-L MOS FET High Speed Power Switching | |
2SJ479 | RENESAS |
获取价格 |
Silicon P Channel MOS FET |