Datasheet > 2SJ465(TE12L)

2SJ465(TE12L)

更新时间： 2024-02-14 00:49:20

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	391K
描述
TRANSISTOR,MOSFET,P-CHANNEL,16V V(BR)DSS,2A I(D),TO-243

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技术参数
数据手册

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2SJ465(TE12L) 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
配置：	Single	最大漏极电流 (Abs) (ID)：	2 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	0.5 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

2SJ465(TE12L) 数据手册

2SJ465

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L −π−MOSV)

2SJ465

DC−DC Converter, Relay Drive and Motor Drive

Applications

Unit: mm

z 2.5-V gate drive

z Low drain−source ON-resistance

: R

= 0.54 Ω (typ.)

DS (ON)

z High forward transfer admittance : |Y | = 1.7 S (typ.)

z Low leakage current : I

= −100 μA (max) (V

= −16 V)

DSS

Enhancement mode : V = −0.5 to −1.1 V

= −10 V, I = −200 μA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

−16

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

±8

GSS

DC (Note 1)

Pulse (Note 1)

−2

Drain current

−6

JEDEC

JEITA

―

Drain power dissipation

Channel temperature

0.5

(Note 2)

1.5

TOSHIBA

2−5K1B

150

°C

stg

Weight: 0.05 g (typ.)

Storage temperature range

−55 to 150

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)

Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change

in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

250

Unit

Thermal resistance, channel to

ambient

°C / W

th (ch−a)

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2009-12-10

12 3 4 5 6

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