Datasheet > 2SJ461-T1B-AT

2SJ461-T1B-AT

更新时间： 2024-11-19 07:01:35

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
5页	712K
描述
TRANSISTOR,MOSFET,P-CHANNEL,50V V(BR)DSS,100MA I(D),SC-59

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2SJ461-T1B-AT 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.84
Is Samacsys：	N	配置：	Single
最大漏极电流 (Abs) (ID)：	0.1 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	0.2 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

2SJ461-T1B-AT 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SJ461

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR HIGH SPEED SWITCHING

PACKAGE DRAWING (Unit: mm)

DESCRIPTION

The 2SJ461 is a switching device which can be driven directly

by a 2.5 V power source.

The 2SJ461 has excellent switching characteristics and is

suitable for use as a high-speed switching device in digital circuit.

2.8 ±±.2

1.5

+±.1

–±.15

±.65

FEATURES

• Can be driven by a 2.5 V power source

• Not necessary to consider driving current because of its high

input impedance.

Marking

• Possible to reduce the number of parts by omitting the bias

resistor.

ORDERING INFORMATION

1. Source

2. Gate

3. Drain

PART NUMBER

PACKAGE

2SJ461

SC-59 (Mini Mold)

Marking: H19

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

EQUIVALENT CIRCUIT

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC)

VDSS

VGSS

I^D(DC)

ID(pulse)

P^T

−50

m7.0

m0.1

m0.2

200

Drain

Drain Current (pulse) ^Note

Total Power Dissipation

Channel Temperature

Body

Diode

Gate

°C

T^ch

150

−55 to +150

Gate

Protection

Diode

Storage Temperature

T^stg

Source

Note PW ≤ 10 ms, Duty Cycle ≤ 50%

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D10730EJ4V0DS00 (4th edition)

The mark shows major revised points.

Date Published April 2005 NS CP(K)

Printed in Japan

1995

12 3 4 5

中文翻译

下载PDF

与2SJ461-T1B-AT相关器件

型号	品牌	获取价格	描述	数据表
2SJ462	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
2SJ462-T1	NEC	获取价格	Power Field-Effect Transistor, 2.5A I(D), 12V, 0.19ohm, 1-Element, P-Channel, Silicon, Met
2SJ463	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
2SJ463A	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
2SJ463A(0)-T1-A	RENESAS	获取价格	2SJ463A(0)-T1-A
2SJ463A-A	NEC	获取价格	100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ463A-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,100MA I(D),SC-70
2SJ463A-T1	NEC	获取价格	100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ463A-T1-A	NEC	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal
2SJ463A-T1-A	RENESAS	获取价格	2SJ463A-T1-A

与2SJ461-T1B-AT相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

18
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

43
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

38

产品中心

服务支持

精选活动

关于我们

帮助中心

2SJ461-T1B-AT

2SJ461-T1B-AT 技术参数

2SJ461-T1B-AT 数据手册

与2SJ461-T1B-AT相关器件

与2SJ461-T1B-AT相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SJ461-T1B-AT

2SJ461-T1B-AT 技术参数

2SJ461-T1B-AT 数据手册

与2SJ461-T1B-AT相关器件

与2SJ461-T1B-AT相关文章

您还可以找

您在本页遇到什么问题？