Datasheet > 2SJ463

2SJ463

更新时间： 2024-11-17 22:33:23

品牌	Logo	应用领域
日电电子 - NEC		晶体开关晶体管场效应晶体管
页数	文件大小	规格书
8页	65K
描述
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

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中文翻译

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技术参数
数据手册

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2SJ463 技术参数

生命周期：	Obsolete	包装说明：	H20, 3 PIN
针数：	3	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.21.00.95
风险等级：	5.82	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V	最大漏极电流 (ID)：	0.1 A
最大漏源导通电阻：	60 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G3	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	P-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON

2SJ463 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SJ463A

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR HIGH SPEED SWITCHING

Package Drawings (unit: mm)

DESCRIPTION

The 2SJ463A is a switching device which can be driven directly

by a 2.5 V power source.

2.1 ±0.1

1.25 ±0.1

The 2SJ463A has excellent switching characteristics, and is

suitable for use as a high-speed switching device in digital circuits.

FEATURES

•

Can be driven by a 2.5 V power source.

Low Gate Cut-off Voltage.

Marking

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

VDSS

V^GSS

I^D(DC)

ID(pulse)

P^T

–30

+20

+0.1

+0.4 ^Note

Drain Current (pulse)

Total Power Dissipation

Channel Temperature

Storage Temperature

150

°C

Equivalent Circuit

T^ch

150

Drain

Tstg

–55 to +150

Electrode

Connection

1. Source

2. Gate

Note PW ≤ 10 µs, Duty Cycle ≤ 1 %

3. Drain

Internal Diode

Gate

Gate Protect

Diode

Source

Marking : H21

The diode connected between the gate and source of the transistor serves as a protector against ESD. When this

device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage

may be applied to this device.

Document No. D11198EJ1V0DS00 (1st edition)

Date Published September 1996 P

Printed in Japan

1996

12 3 4 5 6 7 8

中文翻译

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与2SJ463相关器件

型号	品牌	获取价格	描述	数据表
2SJ463A	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
2SJ463A(0)-T1-A	RENESAS	获取价格	2SJ463A(0)-T1-A
2SJ463A-A	NEC	获取价格	100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ463A-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,100MA I(D),SC-70
2SJ463A-T1	NEC	获取价格	100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ463A-T1-A	NEC	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal
2SJ463A-T1-A	RENESAS	获取价格	2SJ463A-T1-A
2SJ463A-T2	NEC	获取价格	100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ463A-T2-A	NEC	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal
2SJ464	TOSHIBA	获取价格	P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPOER REGULATOR, DC-DC CONVERTE

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