Datasheet > 2SJ462-T1

2SJ462-T1

更新时间： 2024-01-01 17:19:42

品牌	Logo	应用领域
日电电子 - NEC		开关脉冲晶体管
页数	文件大小	规格书
6页	63K
描述
Power Field-Effect Transistor, 2.5A I(D), 12V, 0.19ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, COMPACT PACKAGE-3

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中文翻译

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技术参数
数据手册

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2SJ462-T1 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	MP-2	包装说明：	,
针数：	3	Reach Compliance Code：	unknown
Factory Lead Time：	1 week	风险等级：	5.68
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

2SJ462-T1 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SJ462

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR HIGH SPEED SWITCHING

DESCRIPTION

Package Drawings (unit : mm)

The 2SJ462 is a switching device which can be driven directly

by an IC operating at 3 V.

5.7 ±0.1

1.5 ±0.1

2.0 ±0.2

The 2SJ462 features a low on-state resistance and can be

driven by a low voltage power source, so it is suitable for applica-

tions such as power management.

FEATURES

0.5 ±0.1

•

Can be driven by a 2.5 V power source.

New-type compact package.

0.4 ±0.05

2.1

0.85 ±0.1

4.2

Has advantages of packages for small signals and for power

transistors, and compensates those disadvantages.

Low on-state resistance.

•

Equivalent Circuit

R^DS(ON): 0.29 Ω MAX. @VGS = –2.5 V, ID = –0.5 A

RDS(ON) : 0.19 Ω MAX. @VGS = –4.0 V, ID = –1.0 A

Electrode

Connection

1. Source

2. Drain

Drain

ABSOLUTE MAXIMUM RATINGS (TA = +25 ˚C)

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

VDSS

V^GSS

I^D(DC)

ID(pulse)

P^T

–12

±8.0

3. Gate

±2.5

Internal Diode

Gate

Drain Current (pulse)

Total Power Dissipation

Channel Temperature

Storage Temperature

±5.0*

2.0**

˚C

Gate Protect

Diode

T^ch

150

Source

Tstg

–55 to +150

Marking : UA3

* PW ≤ 10 ms, Duty Cycle ≤ 1 %

** Mounted on ceramic board of 7.5 cm²× 0.7 mm

Document No. D11449EJ1V0DS00 (1st edition)

Date Published April 1996 P

Printed in Japan

1996

12 3 4 5 6

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与2SJ462-T1相关器件

型号	品牌	获取价格	描述	数据表
2SJ463	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
2SJ463A	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
2SJ463A(0)-T1-A	RENESAS	获取价格	2SJ463A(0)-T1-A
2SJ463A-A	NEC	获取价格	100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ463A-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,100MA I(D),SC-70
2SJ463A-T1	NEC	获取价格	100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ463A-T1-A	NEC	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal
2SJ463A-T1-A	RENESAS	获取价格	2SJ463A-T1-A
2SJ463A-T2	NEC	获取价格	100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ463A-T2-A	NEC	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal