2SJ451ZK-UR

更新时间： 2024-11-18 13:04:23

品牌	Logo	应用领域
日立 - HITACHI		晶体小信号场效应晶体管开关光电二极管
页数	文件大小	规格书
8页	43K
描述
Power Field-Effect Transistor, 0.2A I(D), 20V, 9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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2SJ451ZK-UR 数据手册

2SJ451

Silicon P-Channel MOS FET

ADE-208-382

1st. Edition

Application

Low frequency power switching

Features

•

Low on-resistance.

Low drive power

2.5 V gate drive device.

Small package (MPAK).

Outline

MPAK

1. Source

2. Gate

3. Drain

12 3 4 5 6 7 8

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型号	品牌	获取价格	描述	数据表
2SJ452	HITACHI	获取价格	Silicon P-Channel MOS FET
2SJ452	TYSEMI	获取价格	Low frequency power switching
2SJ452ZM	HITACHI	获取价格	0.2A, 50V, 12ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ452ZM-01	HITACHI	获取价格	Power Field-Effect Transistor, 0.2A I(D), 50V, 12ohm, 1-Element, P-Channel, Silicon, Metal
2SJ452ZM-TL	HITACHI	获取价格	Power Field-Effect Transistor, 0.2A I(D), 50V, 12ohm, 1-Element, P-Channel, Silicon, Metal
2SJ452ZM-TR	HITACHI	获取价格	暂无描述
2SJ452ZM-UL	HITACHI	获取价格	Power Field-Effect Transistor, 0.2A I(D), 50V, 12ohm, 1-Element, P-Channel, Silicon, Metal
2SJ452ZM-UR	HITACHI	获取价格	Power Field-Effect Transistor, 0.2A I(D), 50V, 12ohm, 1-Element, P-Channel, Silicon, Metal
2SJ453	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 250V V(BR)DSS \| 3A I(D) \| TO-251
2SJ453TP	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 250V V(BR)DSS \| 3A I(D) \| TO-251VAR