2SJ452

更新时间： 2024-11-04 22:35:55

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2SJ452 数据手册

2SJ452

Silicon P-Channel MOS FET

ADE-208-383

1st. Edition

Application

Low frequency power switching

Features

•

Low on-resistance.

Low drive power

2.5 V gate drive device.

Small package (MPAK).

Outline

MPAK

1. Source

2. Gate

3. Drain

12 3 4 5 6 7 8

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型号	品牌	获取价格	描述	数据表
2SJ452ZM	HITACHI	获取价格	0.2A, 50V, 12ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ452ZM-01	HITACHI	获取价格	Power Field-Effect Transistor, 0.2A I(D), 50V, 12ohm, 1-Element, P-Channel, Silicon, Metal
2SJ452ZM-TL	HITACHI	获取价格	Power Field-Effect Transistor, 0.2A I(D), 50V, 12ohm, 1-Element, P-Channel, Silicon, Metal
2SJ452ZM-TR	HITACHI	获取价格	暂无描述
2SJ452ZM-UL	HITACHI	获取价格	Power Field-Effect Transistor, 0.2A I(D), 50V, 12ohm, 1-Element, P-Channel, Silicon, Metal
2SJ452ZM-UR	HITACHI	获取价格	Power Field-Effect Transistor, 0.2A I(D), 50V, 12ohm, 1-Element, P-Channel, Silicon, Metal
2SJ453	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 250V V(BR)DSS \| 3A I(D) \| TO-251
2SJ453TP	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 250V V(BR)DSS \| 3A I(D) \| TO-251VAR
2SJ453TP-FA	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 250V V(BR)DSS \| 3A I(D) \| TO-252VAR
2SJ454	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 250V V(BR)DSS \| 5A I(D)