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2SJ456

更新时间： 2024-02-15 14:35:29
品牌 Logo 应用领域
三洋 - SANYO 晶体开关晶体管脉冲局域网
页数 文件大小 规格书
4页 33K
描述
Ultrahigh-Speed Switching Applications

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2SJ456 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.83外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：250 V
最大漏极电流 (ID)：9 A最大漏源导通电阻：0.62 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-F3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：P-CHANNEL最大脉冲漏极电流 (IDM)：36 A
认证状态：Not Qualified表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

2SJ456 数据手册

 浏览型号2SJ456的Datasheet PDF文件第2页浏览型号2SJ456的Datasheet PDF文件第3页浏览型号2SJ456的Datasheet PDF文件第4页 
Ordering number : ENN5442A  
P-Channel Silicon MOSFET  
2SJ456  
Ultrahigh-Speed Switching Applications  
Features  
Package Dimensions  
unit : mm  
•
Low ON-resistance.  
•
High-speed diode incorporated.  
2128  
•
Enables simplified fabrication, high-density mount-  
ing, and miniaturization in end products due to the  
surface mountable package.  
[2SJ456]  
8.2  
7.8  
6.2  
0.6  
3
1
2
0.3  
0.6  
1.0  
2.54  
1.0  
2.54  
5.08  
1 : Gate  
2 : Source  
3 : Drain  
7.8  
10.0  
6.0  
Specifications  
SANYO : ZP  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
--250  
±30  
-- 9  
V
V
DSS  
Gate-to-Source Voltage  
Drain Current (DC)  
GSS  
I
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
I
PW≤10µs, duty cycle≤1%  
Tc=25°C  
--36  
50  
A
DP  
P
W
°C  
°C  
D
Tch  
150  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
=--1mA, V =0  
Unit  
min  
max  
Drain-to-Source Breakdown Voltage  
Gate-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
V
I
I
--250  
±30  
V
V
(BR)DSS  
D
GS  
=±100µA, V =0  
DS  
(BR)GSS  
G
I
V
V
V
V
=--250V, V =0  
GS  
--1.0  
±10  
--3.0  
mA  
µA  
V
DSS  
DS  
GS  
DS  
DS  
I
=±25V, V =0  
DS  
GSS  
V (off)  
GS  
=--10V, I =--1mA  
--2.0  
4.8  
D
Forward Transfer Admittance  
Static Drain-to-Source On-State Resistance  
Input Capacitance  
yfs  
(on)  
=--10V, I =--5A  
8.0  
0.4  
S
D
R
I
=--5A, V =--10V  
D GS  
0.55  
Ω
DS  
Ciss  
Coss  
Crss  
V
V
V
=--20V, f=1MHz  
DS  
=--20V, f=1MHz  
DS  
=--20V, f=1MHz  
DS  
1950  
505  
pF  
pF  
pF  
Output Capacitance  
Reverse Transfer Capacitance  
230  
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
22004 TS IM TA-3871 No.5442-1/4  
1234

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 		P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
2SJ461 KEXIN

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 		100mA, 50V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MINIMOLD, SC-59, 3 PIN
2SJ461A-T1B-AT NEC

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 		Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 1-Element, P-Channel, Silicon, Metal
2SJ461A-T2B-AT NEC

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