Datasheet > 2SJ461

2SJ461

更新时间： 2024-01-01 11:15:53

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描述
MOS Field Effect Transistor

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中文翻译

获取价格

技术参数
数据手册

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2SJ461 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.84
Is Samacsys：	N	配置：	Single
最大漏极电流 (Abs) (ID)：	0.1 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	0.2 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

2SJ461 数据手册

SMDTTyyppee

MOSFIECT

MOS Field Effect Transistor

2SJ461

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Can be driven by a 2.5V power source.

Not necessary to consider driving current because of its

high input impedance.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

Possible to reduce the number of parts by omitting the bias resistor.

1.Base

1. Gate

2.Emitter

2. Source

3. Drain

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

VDSS

VGSS

Rating

-50

Unit

Gate to source voltage

Drain current (DC)

7.0

0.1

Drain current(pulse) *

Power dissipation

0.2

200

m W

Channel temperature

Storage temperature

Tch

150

Tstg

-55 to +150

* PW

10 s; d

1%.

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

-20

Typ

Max

Unit

Drain to source breakdown voltage

Gate to source breakdown voltage

Drain cut-off current

VDSS

VGSS

IDSS

ID=-10mA,VGS=0

IG= 200 A ,VDS=0

VDS=-50V,VGS=0

-100

Gate leakage current

IGSS

VGS= 7.0V,VDS=0

Gate to source cutoff voltage

Forward transfer admittance

VGS(off)

-0.7

-0.9

-1.3

VDS=-3.0V,ID=-1

VDS=-3.0V,ID=-10mA

VGS=-2.5V,ID=-3mA

VGS=-4.0V,ID=-10mA

Yfs

100

Drain to source on-state resistance

RDS(on)

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Ciss

C^oss

Crss

td(on)

VDS=-3.0V,VGS=0,f=1MHZ

1.6

270

130

VDD=-3.0V,VGS(on)=-3.0V,ID=--20mA

RL=200 ,RG=10

Turn-off delay time

Fall time

td(off)

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与2SJ461相关器件

型号	品牌	获取价格	描述	数据表
2SJ461-A	RENESAS	获取价格	100mA, 50V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MINIMOLD, SC-59, 3 PIN
2SJ461A-T1B-AT	NEC	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 1-Element, P-Channel, Silicon, Metal
2SJ461A-T2B-AT	NEC	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 1-Element, P-Channel, Silicon, Metal
2SJ461-L	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,50V V(BR)DSS,100MA I(D),SC-59
2SJ461-L-A	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,50V V(BR)DSS,100MA I(D),SC-59
2SJ461-T1B	NEC	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 1-Element, P-Channel, Silicon, Metal
2SJ461-T1B-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,50V V(BR)DSS,100MA I(D),SC-59
2SJ462	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
2SJ462-T1	NEC	获取价格	Power Field-Effect Transistor, 2.5A I(D), 12V, 0.19ohm, 1-Element, P-Channel, Silicon, Met
2SJ463	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING