生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.84 | Is Samacsys: | N |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 250 V | 最大漏极电流 (Abs) (ID): | 3 A |
最大漏极电流 (ID): | 3 A | 最大漏源导通电阻: | 2.6 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 30 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SJ454 | ETC | TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 5A I(D) |
获取价格 |
|
2SJ455 | SANYO | General-Purpose Switching Device Applications |
获取价格 |
|
2SJ456 | SANYO | Ultrahigh-Speed Switching Applications |
获取价格 |
|
2SJ457 | ETC | TRANSISTOR | MOSFET | P-CHANNEL | 450V V(BR)DSS | 500MA I(D) | TO-251 |
获取价格 |
|
2SJ458 | SANYO | P CHANNEL MOS SILICON TRANSISTOR |
获取价格 |
|
2SJ459 | SANYO | Ultrahigh-Speed Switching Applications |
获取价格 |