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2SJ455

更新时间： 2024-11-18 06:17:19
品牌 Logo 应用领域
三洋 - SANYO 晶体开关晶体管脉冲通用开关
页数 文件大小 规格书
3页 180K
描述
General-Purpose Switching Device Applications

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中文翻译

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2SJ455 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PSSO-F2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.84
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：250 V最大漏极电流 (Abs) (ID)：7 A
最大漏极电流 (ID)：7 A最大漏源导通电阻：0.85 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PSSO-F2
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：45 W最大脉冲漏极电流 (IDM)：28 A
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子形式：FLAT
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

2SJ455 数据手册

 浏览型号2SJ455的Datasheet PDF文件第2页浏览型号2SJ455的Datasheet PDF文件第3页 
Ordering number : EN5441  
SANYO Sem iconductors  
DATA S HEET  
P-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
2SJ 455  
Features  
•
Low ON-state resistance.  
•
High-speed switching.  
•
Surface mount type device making the following possible.  
•
Reduction in the number of manufacturing processes for 2SJ455-applied equipment.  
•
High density surface mount applications.  
•
Small size of 2SJ455-applied equipment.  
Specifications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
Ratings  
Unit  
V
V
--250  
±30  
-- 7  
DSS  
V
V
GSS  
I
A
D
Drain Current (Pulse)  
I
PW 10 s, duty cycle 1%  
--28  
45  
A
≤
μ
≤
DP  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
P
Tc=25 C  
W
°
D
Tch  
150  
C
C
°
Tstg  
--55 to +150  
°
at Ta=25°C  
Electrical Characteristics  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
--250  
max  
Drain-to-Source Breakdown Voltage  
Gate-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
V
I
I
=-- 1 mA, V =0V  
GS  
V
V
(BR)DSS  
(BR)GSS  
DSS  
D
=±100μA, V =0V  
DS  
±30  
G
I
I
V
V
V
=--250V, V =0V  
GS  
--1.0  
±10  
mA  
μA  
V
DS  
GS  
DS  
=±25V, V =0V  
DS  
GSS  
V
(off)  
GS  
=-- 10V, I =-- 1mA  
--2.0  
--3.0  
D
Continued on next page.  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not  
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,  
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal  
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten  
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they  
grant any guarantee thereof. If you should intend to use our products for applications outside the standard  
applications of our customer who is considering such use and/or outside the scope of our intended standard  
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the  
intended use, our customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are  
not guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an  
independent device, the customer should always evaluate and test devices mounted in the customer's  
products or equipment.  
www.semiconductor-sanyo.com/network  
22410QA TK IM TA-2539  
No. 5441-1/3  
123

中文翻译

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