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2SJ451ZK-UR PDF预览

2SJ451ZK-UR

更新时间: 2024-11-05 13:04:23
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体晶体管场效应晶体管开关光电二极管
页数 文件大小 规格书
7页 110K
描述
0.2A, 20V, 9ohm, P-CHANNEL, Si, POWER, MOSFET

2SJ451ZK-UR 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.28Is Samacsys:N
配置:SINGLE最小漏源击穿电压:20 V
最大漏极电流 (ID):0.2 A最大漏源导通电阻:9 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:P-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SJ451ZK-UR 数据手册

 浏览型号2SJ451ZK-UR的Datasheet PDF文件第2页浏览型号2SJ451ZK-UR的Datasheet PDF文件第3页浏览型号2SJ451ZK-UR的Datasheet PDF文件第4页浏览型号2SJ451ZK-UR的Datasheet PDF文件第5页浏览型号2SJ451ZK-UR的Datasheet PDF文件第6页浏览型号2SJ451ZK-UR的Datasheet PDF文件第7页 
2SJ451  
Silicon P Channel MOS FET  
REJ03G0864-0400  
Rev.4.00  
Sep 07, 2007  
Description  
Low frequency power switching  
Features  
Low on-resistance.  
Low drive power  
2.5 V gate drive device.  
Small package (MPAK).  
Outline  
RENESAS Package code: PLSP0003ZB-A  
(Package name: MPAK)  
D
3
1. Source  
2. Gate  
3. Drain  
G
1
2
S
Note: Marking is “ZK–”.  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Drain to source voltage  
Gate to source voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Value  
–20  
Unit  
V
±20  
V
–0.2  
A
Note 1  
Drain peak current  
ID (pulse)  
–0.4  
A
Channel dissipation  
Pch  
Tch  
Tstg  
150  
mW  
°C  
°C  
Channel temperature  
Storage temperature  
150  
–55 to +150  
Note: 1. PW 10 µs, duty cycle 1%  
REJ03G864-0400 Rev.4.00 Sep 07, 2007  
Page 1 of 6  

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