生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.28 | Is Samacsys: | N |
配置: | SINGLE | 最小漏源击穿电压: | 20 V |
最大漏极电流 (ID): | 0.2 A | 最大漏源导通电阻: | 9 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | P-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SJ452 | HITACHI |
获取价格 |
Silicon P-Channel MOS FET | |
2SJ452 | TYSEMI |
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Low frequency power switching | |
2SJ452ZM | HITACHI |
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0.2A, 50V, 12ohm, P-CHANNEL, Si, POWER, MOSFET | |
2SJ452ZM-01 | HITACHI |
获取价格 |
Power Field-Effect Transistor, 0.2A I(D), 50V, 12ohm, 1-Element, P-Channel, Silicon, Metal | |
2SJ452ZM-TL | HITACHI |
获取价格 |
Power Field-Effect Transistor, 0.2A I(D), 50V, 12ohm, 1-Element, P-Channel, Silicon, Metal | |
2SJ452ZM-TR | HITACHI |
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暂无描述 | |
2SJ452ZM-UL | HITACHI |
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Power Field-Effect Transistor, 0.2A I(D), 50V, 12ohm, 1-Element, P-Channel, Silicon, Metal | |
2SJ452ZM-UR | HITACHI |
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Power Field-Effect Transistor, 0.2A I(D), 50V, 12ohm, 1-Element, P-Channel, Silicon, Metal | |
2SJ453 | ETC |
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TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 3A I(D) | TO-251 | |
2SJ453TP | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 3A I(D) | TO-251VAR |