是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | SC-59A | 包装说明: | SC-59A, MPAK-3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.64 | Is Samacsys: | N |
配置: | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 最小漏源击穿电压: | 20 V |
最大漏极电流 (Abs) (ID): | 0.2 A | 最大漏极电流 (ID): | 0.2 A |
最大漏源导通电阻: | 9 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e6 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 0.15 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | TIN BISMUTH |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SJ451ZK-UL | HITACHI |
获取价格 |
Power Field-Effect Transistor, 0.2A I(D), 20V, 9ohm, 1-Element, P-Channel, Silicon, Metal- | |
2SJ451ZK-UR | HITACHI |
获取价格 |
Power Field-Effect Transistor, 0.2A I(D), 20V, 9ohm, 1-Element, P-Channel, Silicon, Metal- | |
2SJ451ZK-UR | RENESAS |
获取价格 |
0.2A, 20V, 9ohm, P-CHANNEL, Si, POWER, MOSFET | |
2SJ452 | HITACHI |
获取价格 |
Silicon P-Channel MOS FET | |
2SJ452 | TYSEMI |
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Low frequency power switching | |
2SJ452ZM | HITACHI |
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0.2A, 50V, 12ohm, P-CHANNEL, Si, POWER, MOSFET | |
2SJ452ZM-01 | HITACHI |
获取价格 |
Power Field-Effect Transistor, 0.2A I(D), 50V, 12ohm, 1-Element, P-Channel, Silicon, Metal | |
2SJ452ZM-TL | HITACHI |
获取价格 |
Power Field-Effect Transistor, 0.2A I(D), 50V, 12ohm, 1-Element, P-Channel, Silicon, Metal | |
2SJ452ZM-TR | HITACHI |
获取价格 |
暂无描述 | |
2SJ452ZM-UL | HITACHI |
获取价格 |
Power Field-Effect Transistor, 0.2A I(D), 50V, 12ohm, 1-Element, P-Channel, Silicon, Metal |