2SJ451

更新时间： 2024-09-24 22:35:55

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2SJ451 数据手册

2SJ451

Silicon P-Channel MOS FET

ADE-208-382

1st. Edition

Application

Low frequency power switching

Features

•

Low on-resistance.

Low drive power

2.5 V gate drive device.

Small package (MPAK).

Outline

MPAK

1. Source

2. Gate

3. Drain

12 3 4 5 6 7 8

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型号	品牌	获取价格	描述	数据表
2SJ451ZK	HITACHI	获取价格	Power Field-Effect Transistor, 0.2A I(D), 20V, 9ohm, 1-Element, P-Channel, Silicon, Metal-
2SJ451ZK	RENESAS	获取价格	0.2A, 20V, 9ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ451ZK-01	HITACHI	获取价格	Power Field-Effect Transistor, 0.2A I(D), 20V, 9ohm, 1-Element, P-Channel, Silicon, Metal-
2SJ451ZK-TL	RENESAS	获取价格	0.2A, 20V, 9ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ451ZK-TL	HITACHI	获取价格	Power Field-Effect Transistor, 0.2A I(D), 20V, 9ohm, 1-Element, P-Channel, Silicon, Metal-
2SJ451ZK-TL-E	RENESAS	获取价格	Silicon P Channel MOS FET
2SJ451ZK-TR	HITACHI	获取价格	Power Field-Effect Transistor, 0.2A I(D), 20V, 9ohm, 1-Element, P-Channel, Silicon, Metal-
2SJ451ZK-TR-E	RENESAS	获取价格	Silicon P Channel MOS FET
2SJ451ZK-UL	HITACHI	获取价格	Power Field-Effect Transistor, 0.2A I(D), 20V, 9ohm, 1-Element, P-Channel, Silicon, Metal-
2SJ451ZK-UR	HITACHI	获取价格	Power Field-Effect Transistor, 0.2A I(D), 20V, 9ohm, 1-Element, P-Channel, Silicon, Metal-