2SJ450

更新时间： 2024-11-04 22:35:55

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2SJ450 数据手册

2SJ450

Silicon P-Channel MOS FET

ADE-208-381

1st. Edition

Application

High speed power switching

Features

•

Low on-resistance.

Low drive power

High speed switching

2.5 V gate drive device.

Outline

UPAK

1. Gate

2. Drain

3. Source

4. Drain

12 3 4 5 6 7...9

中文翻译

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型号	品牌	获取价格	描述	数据表
2SJ450UY	HITACHI	获取价格	Power Field-Effect Transistor, 1A I(D), 60V, 1.9ohm, 1-Element, P-Channel, Silicon, Metal-
2SJ450UYTL	HITACHI	获取价格	1A, 60V, 1.9ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ450UYTR	HITACHI	获取价格	1A, 60V, 1.9ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ450UYUL	HITACHI	获取价格	暂无描述
2SJ450UYUR	HITACHI	获取价格	1 A, 60 V, 1.9 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ451	RENESAS	获取价格	Silicon P Channel MOS FET
2SJ451	TYSEMI	获取价格	Low frequency power switching
2SJ451	HITACHI	获取价格	Silicon P-Channel MOS FET
2SJ451ZK	HITACHI	获取价格	Power Field-Effect Transistor, 0.2A I(D), 20V, 9ohm, 1-Element, P-Channel, Silicon, Metal-
2SJ451ZK	RENESAS	获取价格	0.2A, 20V, 9ohm, P-CHANNEL, Si, POWER, MOSFET