是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | SFM | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.36 | 其他特性: | HIGH VOLTAGE, AVALANCHE RATING |
雪崩能效等级(Eas): | 80 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 250 V |
最大漏极电流 (ID): | 4 A | 最大漏源导通电阻: | 2 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大脉冲漏极电流 (IDM): | 16 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SJ449 | NEC |
获取价格 |
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE | |
2SJ449-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 6A I(D), 250V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal | |
2SJ450 | HITACHI |
获取价格 |
Silicon P-Channel MOS FET | |
2SJ450UY | HITACHI |
获取价格 |
Power Field-Effect Transistor, 1A I(D), 60V, 1.9ohm, 1-Element, P-Channel, Silicon, Metal- | |
2SJ450UYTL | HITACHI |
获取价格 |
1A, 60V, 1.9ohm, P-CHANNEL, Si, POWER, MOSFET | |
2SJ450UYTR | HITACHI |
获取价格 |
1A, 60V, 1.9ohm, P-CHANNEL, Si, POWER, MOSFET | |
2SJ450UYUL | HITACHI |
获取价格 |
暂无描述 | |
2SJ450UYUR | HITACHI |
获取价格 |
1 A, 60 V, 1.9 ohm, P-CHANNEL, Si, POWER, MOSFET | |
2SJ451 | RENESAS |
获取价格 |
Silicon P Channel MOS FET | |
2SJ451 | TYSEMI |
获取价格 |
Low frequency power switching |