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2SJ449

更新时间: 2024-11-19 22:35:55
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 121K
描述
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

2SJ449 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SFM包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.34Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):180 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:250 V最大漏极电流 (ID):6 A
最大漏源导通电阻:0.8 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大脉冲漏极电流 (IDM):24 A认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SJ449 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SJ449  
SWITCHING  
P-CHANNEL POWER MOS FET  
INDUSTRIAL USE  
DESCRIPTION  
The 2SJ449 is P-Channel MOS Field Effect Transistor de-  
signed for high voltage switching applications.  
PACKAGE DIMENSIONS  
(in millimeters)  
4.5 0.2  
10.0 0.ꢀ  
FEATURES  
ꢀ.2 0.2  
2.7 0.2  
Low On-Resistance  
RDS(on) = 0.8 MAX. (@ VGS = –10 V, ID = –3.0 A)  
Low Ciss  
Ciss = 1040 pF TYP.  
High Avalanche Capability Ratings  
Isolated TO-220 Package  
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
VDSS  
–250  
V
V
±
VGSS  
30  
±
ID(DC)  
ID(pulse)  
6.0  
A
±
2.5 0.1  
0.7 0.1  
2.54  
1.ꢀ 0.2  
Drain Current (pulse)*  
24  
A
1.5 0.2 0.65 0.1  
2.54  
Total Power Dissipation (Tc = 25 ˚C) PT1  
Total Power Dissipation (TA = 25 ˚C) PT2  
35  
2.0  
150  
W
W
˚C  
1. Gate  
2. Drain  
ꢀ. Source  
Channel Temperature  
Tch  
Tstg  
IAS  
Storage Temperature  
–55 to +150 ˚C  
Single Avalanche Current**  
Single Avalanche Energy**  
–6.0  
180  
A
1
2 ꢀ  
EAS  
mJ  
*
PW 10 µs, Duty Cycle 1 %  
MP-45F(ISOLATED TO-220)  
** Starting Tch = 25 ˚C, RG = 25 , VGS = –20 V 0  
Drain  
Body  
Diode  
Gate  
Source  
Document No. D10030EJ1V0DS00  
Date Published May 1995 P  
Printed in Japan  
1995  
©

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