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2SJ418TP PDF预览

2SJ418TP

更新时间: 2024-11-19 23:20:35
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关
页数 文件大小 规格书
4页 101K
描述
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 8A I(D) | TO-251VAR

2SJ418TP 数据手册

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Ordering number:ENN5298A  
P-Channel Silicon MOSFET  
2SJ418  
Ultrahigh-Speed Switching Applications  
Features  
Package Dimensions  
unit:mm  
· Low ON resistance.  
· Ultrahigh-speed switching.  
· 4V drive.  
2083B  
[2SJ418]  
6.5  
2.3  
5.0  
0.5  
4
0.85  
0.7  
1.2  
0.6  
0.5  
1 : Gate  
2 : Drain  
1
2
3
3 : Source  
4 : Drain  
2.3  
2.3  
SANYO : TP  
unit:mm  
2092B  
[2SJ418]  
6.5  
2.3  
0.5  
5.0  
4
0.5  
1.2  
0.85  
1
2
3
0.6  
1 : Gate  
0 to 0.2  
2 : Drain  
3 : Source  
4 : Drain  
2.3  
2.3  
SANYO : TP-FA  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Company  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
60100TS (KOTO) TA-2630 No.5298–1/4  

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