生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G6 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | Is Samacsys: | N |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 5 A | 最大漏源导通电阻: | 0.107 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G6 |
元件数量: | 1 | 端子数量: | 6 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | P-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SJ424 | SANKEN | MOSFET |
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2SJ425 | SANKEN | MOSFET |
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2SJ426 | SANKEN | Power Field-Effect Transistor, 15A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Meta |
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2SJ437 | ETC | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 35A I(D) |
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2SJ438 | TOSHIBA | P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND M |
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2SJ438(F) | TOSHIBA | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,5A I(D),TO-220AB |
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