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2SJ426 PDF预览

2SJ426

更新时间: 2024-11-24 19:57:03
品牌 Logo 应用领域
三垦 - SANKEN 局域网晶体管
页数 文件大小 规格书
58页 737K
描述
Power Field-Effect Transistor, 15A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

2SJ426 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84外壳连接:ISOLATED
配置:SINGLE最小漏源击穿电压:60 V
最大漏极电流 (ID):15 A最大漏源导通电阻:0.14 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:P-CHANNEL功耗环境最大值:35 W
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管元件材料:SILICONBase Number Matches:1

2SJ426 数据手册

 浏览型号2SJ426的Datasheet PDF文件第2页浏览型号2SJ426的Datasheet PDF文件第3页浏览型号2SJ426的Datasheet PDF文件第4页浏览型号2SJ426的Datasheet PDF文件第5页浏览型号2SJ426的Datasheet PDF文件第6页浏览型号2SJ426的Datasheet PDF文件第7页 
Bulletin No.  
T03EB0  
(Nov., 2000)  
MOS FET  

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