2SJ439(SM)

更新时间： 2024-11-20 13:01:39

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中文翻译

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数据手册

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2SJ439(SM) 数据手册

2SJ439

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π−MOSV)

2SJ439

DC/DC Converter, Relay Drive and Motor Drive

Applications

Unit: mm

z 2.5-V gate drive

z Low drain−source ON-resistance

z High forward transfer admittance

: R

= 0.18 Ω (typ.)

DS (ON)

: |Y | = 6.0 S (typ.)

z Low leakage current : I

= −100 μA (max) (V

= −16 V)

DSS

z Enhancement mode : V = −0.5~−1.1 V (V

= −10 V, I = −1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Drain−source voltage

Symbol

Rating

Unit

−16

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

±8

GSS

DC (Note 1)

Pulse(Note 1)

−5

JEDEC

JEITA

―

Drain current

−20

SC-64

Drain power dissipation (Tc = 25°C)

Channel temperature

°C

stg

TOSHIBA

2-7B1B

150

Weight: 0.36 g (typ.)

Storage temperature range

−55~150

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.)

may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristic

Symbol

Max

6.25

125

Unit

Thermal resistance, channel to case

°C / W

th (ch−c)

th (ch−a)

Thermal resistance, channel to

ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

This transistor is an electrostatic-sensitive device. Handle with care.

JEDEC

―

JEITA

SC-64

TOSHIBA

2-7J1B

Weight: 0.36 g (typ.)

2006-11-16

12 3 4 5 6

中文翻译

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