Datasheet > 2SJ418TP-FA

2SJ418TP-FA

更新时间： 2024-11-19 23:20:35

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	101K
描述
TRANSISTOR \| MOSFET \| P-CHANNEL \| 30V V(BR)DSS \| 8A I(D) \| TO-252VAR

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2SJ418TP-FA 数据手册

Ordering number:ENN5298A

P-Channel Silicon MOSFET

2SJ418

Ultrahigh-Speed Switching Applications

Features

Package Dimensions

unit:mm

· Low ON resistance.

· Ultrahigh-speed switching.

· 4V drive.

2083B

[2SJ418]

6.5

2.3

5.0

0.5

0.85

0.7

1.2

0.6

0.5

1 : Gate

2 : Drain

3 : Source

4 : Drain

2.3

SANYO : TP

unit:mm

2092B

[2SJ418]

6.5

2.3

0.5

5.0

0.5

1.2

0.85

0.6

1 : Gate

0 to 0.2

2 : Drain

3 : Source

4 : Drain

2.3

SANYO : TP-FA

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

60100TS (KOTO) TA-2630 No.5298–1/4

12 3 4

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