生命周期: | End Of Life | 零件包装代码: | TO-220SM |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.67 | Is Samacsys: | N |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 14 A |
最大漏源导通电阻: | 0.12 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | P-CHANNEL |
功耗环境最大值: | 40 W | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SJ312TE24L | TOSHIBA | TRANSISTOR 14 A, 60 V, 0.19 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power |
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2SJ312TE24R | TOSHIBA | TRANSISTOR 14 A, 60 V, 0.19 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power |
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2SJ313 | TOSHIBA | P CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION) |
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2SJ313_07 | TOSHIBA | Audio Frequency Power Amplifier Application |
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2SJ313_09 | TOSHIBA | Audio Frequency Power Amplifier Application |
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2SJ313O | TOSHIBA | TRANSISTOR 1 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10R1B, SC-67, 3 PIN |
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