Datasheet > 2SJ313O

2SJ313O

更新时间： 2024-11-15 20:05:35

品牌	Logo	应用领域
东芝 - TOSHIBA		局域网放大器晶体管
页数	文件大小	规格书
5页	255K
描述
TRANSISTOR 1 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10R1B, SC-67, 3 PIN, FET General Purpose Power

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技术参数
数据手册

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2SJ313O 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
零件包装代码：	SC-67	包装说明：	FLANGE MOUNT, R-PSFM-T3
针数：	3	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.72
外壳连接：	ISOLATED	配置：	SINGLE
最小漏源击穿电压：	180 V	最大漏极电流 (ID)：	1 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
工作模式：	DEPLETION MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	P-CHANNEL	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
Base Number Matches：	1

2SJ313O 数据手册

2SJ313

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

2SJ313

Audio Frequency Power Amplifier Application

Unit: mm

z High breakdown voltage: V

= −180 V

DSS

z High forward transfer admittance: |Y | = 0.7 S (typ.)

z Complementary to 2SK2013

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

−180

±20

DSS

JEDEC

JEITA

―

Gate−source voltage

Drain current

GSS

SC-67

(Note 1)

−1

Power dissipation (Tc = 25°C)

Channel temperature

Storage temperature range

°C

TOSHIBA

2-10R1B

stg

150

Weight: 1.9 g (typ.)

−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

2009-09-29

12 3 4 5

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2SJ313-O	TOSHIBA	获取价格	暂无描述
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