2SJ314-01L

更新时间： 2024-02-03 21:21:51

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
3页	147K
描述
P-CHANNEL SILICON POWER MOSFET

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技术参数
数据手册

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2SJ314-01L 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	Base Number Matches：	1

2SJ314-01L 数据手册

FUJI POWER MOSFET

2SJ314-01L,S

P-CHANNEL SILICON POWER MOSFET

FAP-III SERIES

Outline Drawings

Features

K-Pack(L)

K-Pack(S)

High speed switching

Low on-resistance

No secondary breakdown

Low driving power

High forward Transconductance

Avalanche-proof

Applications

Switching regulators

DC-DC converters

General purpose power amplifier

L-type

EIAJ

Maximum ratings and characteristics

Absolute maximum ratings (Tc=25°C unless otherwise specified)

Equivalent circuit schematic

Item

Symbol

VDS

VDGR

Rating

-60

Unit

Drain-source voltage

Drain-gate voltage (RGS=20k

Continuous drain current

Pulsed drain current

Gate-source voltage

Max. power dissipation

Operating and storage

temperature range

Drain(D)

)

-60

-5

Gate(G)

ID(puls]

VGS

-20

±20

°C

Tch

+150

-55 to +150

Source(S)

Tstg

Electrical characteristics (Tc =25°C unless otherwise specified)

Min.

Typ.

Max. Units

Test Conditions

Symbol

V(BR)DSS

VGS(th)

IDSS

Item

ID=1mA

VDS= -60V

VGS=0V

-60

Drain-source breakdown voltage

VDS=VGS

-1.0

-1.5

-10

-0.2

-2.5

-500

-1.0

100

Gate threshold voltage

Zero gate voltage drain current

Tch=25°C

μA

Tch=125°C

±20V

VGS=

VDS=0V

IGSS

Gate-source leakage current

ID= -2.5A

VGS= -4V

280

200

4.5

480

300

mΩ

RDS(on)

Drain-source on-state resistance

VGS= -10V

2.0

ID=2.5A VDS= -25V

VDS= -25V

gfs

Forward transconductance

Input capacitance

500

200

120

750

300

180

Ciss

Coss

Crss

td(on)

VGS=0V

Output capacitance

f=1MHz

VCC= -30V RG=25 Ω

ID= -3A

Reverse transfer capacitance

Turn-on time ton

(ton=td(on)+tr)

VGS= -10V

100

150

120

td(off)

Turn-off time toff

(toff=td(off)+tf)

L=100 H

Tch=25°C

-5

IAV

Avalanche capability

Continuous reverse drain current

Pulsed reverse drain current

Diode forward on-voltage

Reverse recovery time

Reverse recovery charge

Tc=25°C

IDR

IDRM

VSD

trr

-5

-20

IF=2xIDR VGS=0V Tch=25°C

IF=IDR VGS=0V

-4.0

μC

-di/dt=100A/μs Tch=25°C

Qrr

0.18

Thermal characteristics

Item

Min.

Typ.

Max. Units

Symbol

Rth(ch-c)

6.25

°C/W

Thermal resistance

Rth(ch-a)

125.0

°C/W

12 3

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