2SJ317

更新时间： 2024-11-15 06:25:15

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2SJ317 技术参数

2SJ317

Silicon P Channel MOS FET

REJ03G0857-0200

(Previous: ADE-208-1191)

Rev.2.00

Sep 07, 2005

Description

High speed power switching

Low voltage operation

Features

•

Very low on-resistance

High speed switching

Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc.

Outline

RENESAS Package code: PLZZ0004CA-A

(Package name: UPAK

)

1. Gate

2. Drain

3. Source

4. Drain

Note: Marking is “NY”.

*UPAK is a trademark of Renesas Technology Corp.

Rev.2.00 Sep 07, 2005 page 1 of 6

12 3 4 5 6 7

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型号	品牌	获取价格	描述	数据表
2SJ317NY	HITACHI	获取价格	2A, 12V, 0.7ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ317NYTL	RENESAS	获取价格	暂无描述
2SJ317NYTL	HITACHI	获取价格	Power Field-Effect Transistor, 2A I(D), 12V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-
2SJ317NYTL-E	RENESAS	获取价格	Silicon P Channel MOS FET
2SJ317NYTR	HITACHI	获取价格	Power Field-Effect Transistor, 2A I(D), 12V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-
2SJ317NYTR	RENESAS	获取价格	2A, 12V, 0.7ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ317NYTR-E	RENESAS	获取价格	Silicon P Channel MOS FET
2SJ317NYUL	HITACHI	获取价格	Power Field-Effect Transistor, 2A I(D), 12V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-
2SJ317NYUR	HITACHI	获取价格	Power Field-Effect Transistor, 2A I(D), 12V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-
2SJ317TR	RENESAS	获取价格	暂无描述