2SJ317NYTR-E

更新时间： 2024-02-18 01:19:59

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2SJ317NYTR-E 数据手册

2SJ317

Silicon P Channel MOS FET

REJ03G0857-0200

(Previous: ADE-208-1191)

Rev.2.00

Sep 07, 2005

Description

High speed power switching

Low voltage operation

Features

•

Very low on-resistance

High speed switching

Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc.

Outline

RENESAS Package code: PLZZ0004CA-A

(Package name: UPAK

)

1. Gate

2. Drain

3. Source

4. Drain

Note: Marking is “NY”.

*UPAK is a trademark of Renesas Technology Corp.

Rev.2.00 Sep 07, 2005 page 1 of 6

12 3 4 5 6 7

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型号	品牌	描述	获取价格	数据表
2SJ317NYUL	HITACHI	Power Field-Effect Transistor, 2A I(D), 12V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-	获取价格
2SJ317NYUR	HITACHI	Power Field-Effect Transistor, 2A I(D), 12V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-	获取价格
2SJ317TR	RENESAS	暂无描述	获取价格
2SJ318(L)	ETC	TRANSISTOR \| MOSFET \| P-CHANNEL \| 20V V(BR)DSS \| 5A I(D) \| TO-251AA	获取价格
2SJ318(S)	ETC	TRANSISTOR \| MOSFET \| P-CHANNEL \| 20V V(BR)DSS \| 5A I(D) \| TO-252AA	获取价格
2SJ318(S)TL	HITACHI	Power Field-Effect Transistor, 5A I(D), 20V, 0.19ohm, 1-Element, P-Channel, Silicon, Metal	获取价格