2SJ317NYTR-E

更新时间： 2024-01-21 21:01:17

品牌	Logo	应用领域
瑞萨 - RENESAS		晶体晶体管场效应晶体管
页数	文件大小	规格书
7页	74K
描述
Silicon P Channel MOS FET

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数据手册

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2SJ317NYTR-E 数据手册

2SJ317

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

Static Drain to Source on State Resistance

vs. Temperature

–0.5

1.0

Pulse Test

–0.4

–0.3

–0.2

–0.1

0.8

0.6

0.4

0.2

I_D= –2 A

I_D= –1 A

–1 A

–0.5 A

V_GS= –2.5 V

–0.5 A

–0.1 A

–0.2 A

–2 A

–1 A, 0.5 A

–4 V

–25

100

–1

–2

–3

–4

–5

Case Temperature Tc (°C)

Gate to Source Voltage V_GS(V)

Reverse Recovery Time vs.

Recovery Time

Switching Time vs. Drain Current

2000

1000

2000

1000

500

d(off)

500

200

100

V_GS= –4 V

V_DD= –10 V

PW = 5 µs

200

100

Duty cycle ≤ 1 %

d(on)

di / dt = 10 A / µs

V_GS= 0

–0.1 –0.2

–0.5 –1

–2

–5 –10

–0.05 –0.1 –0.2

–0.5 –1

–2

–5

Drain Current I_D(A)

Reverse Drain Current I_DR(A)

Typical Capacitance vs.

Drain to Source Voltage

Dynamic Input Characteristics

–25

–20

–15

–10

–5

–10

–8

–6

–4

–2

1000

500

V_DD= –10 V

I_D= –2 A

Pulse test

V_GS= 0

f = 1 MHz

Coss

200

100

V_GS

Ciss

Crss

V_DS

–0.1 –0.2

–0.5 –1

–2

–5 –10

Gate Charge Qg (nc)

Drain to Source Voltage V_DS(V)

Rev.2.00 Sep 07, 2005 page 4 of 6

1 2 345 6 7

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