Datasheet > 2SJ313-O(Q)

2SJ313-O(Q)

更新时间： 2024-01-01 21:09:09

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	242K
描述
TRANSISTOR,MOSFET,P-CHANNEL,180V V(BR)DSS,1A I(D),TO-220AB

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技术参数
数据手册

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2SJ313-O(Q) 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.61	配置：	Single
最大漏极电流 (Abs) (ID)：	1 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	25 W
子类别：	Other Transistors	表面贴装：	NO
Base Number Matches：	1

2SJ313-O(Q) 数据手册

2SJ313

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

2SJ313

Audio Frequency Power Amplifier Application

Unit: mm

z High breakdown voltage: V

= −180 V

DSS

z High forward transfer admittance: |Y | = 0.7 S (typ.)

z Complementary to 2SK2013

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

−180

±20

DSS

JEDEC

JEITA

―

Gate−source voltage

Drain current

GSS

SC-67

(Note 1)

−1

Power dissipation (Tc = 25°C)

Channel temperature

Storage temperature range

°C

TOSHIBA

2-10R1B

stg

150

Weight: 1.9 g (typ.)

−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

2009-09-29

12 3 4 5

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