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2SJ313_07 PDF预览

2SJ313_07

更新时间: 2024-02-04 20:43:14
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
5页 372K
描述
Audio Frequency Power Amplifier Application

2SJ313_07 数据手册

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2SJ313  
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type  
2SJ313  
Audio Frequency Power Amplifier Application  
Unit: mm  
z High breakdown voltage: V  
= 180 V  
DSS  
z High forward transfer admittance: |Y | = 0.7 S (typ.)  
fs  
z Complementary to 2SK2013  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drainsource voltage  
Symbol  
Rating  
Unit  
V
V
180  
±20  
V
V
DSS  
JEDEC  
JEITA  
Gatesource voltage  
Drain current  
GSS  
(Note 1)  
I
1  
A
SC-67  
D
Power dissipation (Tc = 25°C)  
Channel temperature  
Storage temperature range  
P
25  
W
°C  
°C  
D
ch  
stg  
TOSHIBA  
2-10R1B  
T
150  
Weight: 1.9 g (typ.)  
T
55~150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
1
2006-11-16  

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