是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | 风险等级: | 5.84 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 0.1 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 0.2 W | 子类别: | Other Transistors |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SJ166-T1B | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 1-Element, P-Channel, Silicon, Metal | |
2SJ166-T2B | NEC |
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暂无描述 | |
2SJ166-T2B | RENESAS |
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TRANSISTOR,MOSFET,P-CHANNEL,50V V(BR)DSS,100MA I(D),SOT-346 | |
2SJ167 | TOSHIBA |
获取价格 |
P CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH, INTERFACE APPLICATIONS) | |
2SJ167_07 | TOSHIBA |
获取价格 |
Silicon P Channel MOS Type | |
2SJ168 | TOSHIBA |
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P CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH, INTERFACE APPLICATIONS) | |
2SJ168(T5L,PP,F) | TOSHIBA |
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Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, P-Channel, Silicon, Metal | |
2SJ168(T5LMAA,F) | TOSHIBA |
获取价格 |
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, P-Channel, Silicon, Metal | |
2SJ168(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,200MA I(D),SC-59 | |
2SJ168(TE85L,F) | TOSHIBA |
获取价格 |
TRANSISTOR 200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, 2-3F1F, S-MINI, S |